Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications

The fabrication of structures with a minimum feature size of < 100 nm by se lective removal of material requires adequate masking layers during the etc hing process. Since commonly applied techniques like optical-, e-beam- or X -ray-lithography are associated with partial disadvantages an alternative p rocess of pattern generation in CVD-diamond is presented in this paper. Thi s technique is based on spacer fabrication in CMOS-technology and uses only standard MOS-processes, like conform deposition and optical lithography. T herefore it could be transferred to various technology lines. The necessita ted adaptation to diamond substrates is discussed in this paper as well as the fabrication of diamond paths with approximately 100 nm in width. (C) 20 01 Elsevier Science B.V. All rights reserved.