Luminescence study of polycrystalline CVD diamond films containing a smallamount of nitrogen

Citation
E. Rzepka et al., Luminescence study of polycrystalline CVD diamond films containing a smallamount of nitrogen, DIAM RELAT, 10(3-7), 2001, pp. 542-545
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
10
Issue
3-7
Year of publication
2001
Pages
542 - 545
Database
ISI
SICI code
0925-9635(200103/07)10:3-7<542:LSOPCD>2.0.ZU;2-L
Abstract
Polycrystalline diamond films were grown by the MPCVD method in a silica be ll-jar chamber on 2-in. silicon substrates. UV argon Laser (363.8 nm) -indu ced photoluminescence (PL) at liquid helium temperature and cathodoluminesc ence (CL) at liquid nitrogen temperature were performed on the films. For t he films containing varying amounts of nitrogen, PL spectra show a bright b lue/green luminescence and a broad band with sharp lines going from 550 to 650 nm attributed to nitrogen carbon vacancy (N-V) centers in different cha rge states. The intense blue/green contribution extends from 2.65 to 2.3 eV , with a sequence of sharp bands peaking at 2.6538, 2.5803, 2.5504, 2.4238 and 2.3652 eV. The average value of their separation is approximately 74 me V(similar to 600 cm(-1)). CL spectra show a prominent complex, broad band-A luminescence peaking at 2.72 eV, on which was superimposed the above blue/ green lines. Deep UV emissions were also obtained for energies greater than 3.0 eV, up to near the band edge, depending on the samples. (C) 2001 Elsev ier Science B.V. All rights reserved.