Heat-spreading diamond films for GaN-based high-power transistor devices

Authors
Seelmann-Eggebert, M Meisen, P Schaudel, F Koidl, P Vescan, A Leier, H
Citation
M. Seelmann-eggebert et al., Heat-spreading diamond films for GaN-based high-power transistor devices, DIAM RELAT, 10(3-7), 2001, pp. 744-749
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
10
Issue
3-7
Year of publication
2001
Pages
744 - 749
Database
ISI
SICI code
0925-9635(200103/07)10:3-7<744:HDFFGH>2.0.ZU;2-F
Abstract
We discuss the potential of heat-spreading films with respect to improving the performance of thermally limited high-power high-frequency GaN-FET devi ces and report on successful diamond deposition on GaN-FETs. Detailed condi tions for process compatibility with GaN-FET technology are discussed and s hown to be satisfied by the low-temperature deposition process developed. ( C) 2001 Elsevier Science B.V. All rights reserved.