Electrical characterization of CVD diamond-n(+) silicon junctions

The electrical characteristics of CVD-diamond/n(+)-Si heterojunction device s are reported. Below 250 K the diodes show an unusual inversion of their r ectification properties. This behavior is attributed to an enhanced tunneli ng component due to interface states, which change their occupation with th e applied bias. The temperature dependence of the loss tangent shows two re laxation processes with different activation energies. These processes are likely related with two parallel charge transport mechanisms, one through t he diamond grain, and the other through the grain boundary. (C) 2001 Elsevi er Science B.V. Ah rights reserved.