Current-induced conditioning of hydrogenated amorphous carbon thin films for field emission

Citation
Jd. Carey et Srp. Silva, Current-induced conditioning of hydrogenated amorphous carbon thin films for field emission, DIAM RELAT, 10(3-7), 2001, pp. 873-877
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
10
Issue
3-7
Year of publication
2001
Pages
873 - 877
Database
ISI
SICI code
0925-9635(200103/07)10:3-7<873:CCOHAC>2.0.ZU;2-K
Abstract
The field emission characteristics of hydrogenated amorphous carbon (a-C:H) thin films subjected to electrical current stressing have been examined. I n these a-C:H films, deposited by radio frequency PECVD, an initially high, applied electric field (> 40 V mum(-1)) is sometimes required before the o nset of electron emission. The threshold field in subsequent voltage cycles tend to converge after three or four cycles. By current stressing of the a -C:H films to different current levels it is shown that it is possible to r emove the need for a conventional conditioning cycle. Measurements performe d on unstressed films sometimes show that conditioning is required even aft er initial testing when samples are retested. In films, which have been cur rent-stressed, the films remain fully conditioned even after 87 h after the original tests have been performed. The surface morphology of the current- stressed films is examined using atomic force microscopy and shows that the surface of the stressed area has been altered with three distinct regions present. The prime novelty of this work shows that conditioning of a-C:H fi lms can be achieved through the use of current stressing. (C) 2001 Elsevier Science B.V. All rights reserved.