Formation of silicon carbide and silicon carbonitride by RF-plasma CVD

Numerous experimental studies have been performed to investigate the chemic al vapor deposition (CVD) of silicon carbide with several organometallic pr ecursors, the most widely used being methyltrichlorosilane (MTS). Usually t he CVD process is carried out to achieve layers on different substrates as wear resistant coatings or for electronic applications, but also silicon ca rbide or silicon carbonitride powders are of technological importance as ma trix composites to form multicomponent ceramics. Such composites can be use d as sintering materials for high duty ceramics due to their high thermal s tability and chemical resistance. We investigated the formation of silicon carbide and silicon carbonitride deposits from methyltrichlorosilane (MTS) in an argon- and nitrogen-RF-plasma discharge CVD process with respect to t he process parameters. The deposits were merely formed in the gas phase and characterized with SEM, XRD, and Raman spectroscopy to gain information of their morphology, crystallinity and composition with regard to the deposit ion parameters. (C) 2001 Elsevier Science B.V. All rights reserved.