Density of gap states in amorphous hydrogenated silicon carbide determinedusing high-frequency capacitance-voltage measurement technique

Authors
Chew, K",Rusli,"Yu, MB Yoon, SF Ligatchev, V Ahn, J
Citation
Mb. Chew, K",rusli,"yu et al., Density of gap states in amorphous hydrogenated silicon carbide determinedusing high-frequency capacitance-voltage measurement technique, DIAM RELAT, 10(3-7), 2001, pp. 1273-1277
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
10
Issue
3-7
Year of publication
2001
Pages
1273 - 1277
Database
ISI
SICI code
0925-9635(200103/07)10:3-7<1273:DOGSIA>2.0.ZU;2-U
Abstract
The density of gap states distribution of amorphous hydrogenated silicon ca rbide films grown with ECR-CVD was investigated with the high-frequency (1 MHz) capacitance-voltage measurement technique. The mid-gap density near th e Fermi level was found to be 3 X 10(15) cm(-3) eV(-1), and rose exponentia lly towards the valence band. The energy band diagram for the a-SiC:H/n-typ e c-Si (N-d = 2.8 x 10(15) cm(-3)) heterostructure at zero bias was also pr oposed. (C) 2001 Elsevier Science B.V. All rights reserved.