Group III-V impurities in beta-SiC: lattice distortions and solubility

Authors
Reshanov, SA Parfenova, II Rastegaev, VP
Citation
Sa. Reshanov et al., Group III-V impurities in beta-SiC: lattice distortions and solubility, DIAM RELAT, 10(3-7), 2001, pp. 1278-1282
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
10
Issue
3-7
Year of publication
2001
Pages
1278 - 1282
Database
ISI
SICI code
0925-9635(200103/07)10:3-7<1278:GIIIBL>2.0.ZU;2-5
Abstract
The tight-binding theory calculations within Harrison bonding orbital metho d has been carried out for substitutional impurities of group III-V in beta -SiC. The obtained results of atomic displacements, the chemical and defor mation contributions to bond energy change have allowed to estimate theoret ically lattice parameter dependence on impurity concentration, and solubili ty limits of impurities in SiC at both equilibrium and non-equilibrium cond itions with regard of the growth surface. The predicted values agree well w ith experimental data. (C) 2001 Elsevier Science B.V. All rights reserved.