Near band-edge transitions in AlN thin films grown on different substrates

Authors
Teofilov, N Thonke, K Sauer, R Ebling, DG Kirste, L Benz, KW
Citation
N. Teofilov et al., Near band-edge transitions in AlN thin films grown on different substrates, DIAM RELAT, 10(3-7), 2001, pp. 1300-1303
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
10
Issue
3-7
Year of publication
2001
Pages
1300 - 1303
Database
ISI
SICI code
0925-9635(200103/07)10:3-7<1300:NBTIAT>2.0.ZU;2-D
Abstract
The optical properties of epitaxial aluminum nitride (AlN) films grown on s apphire, SiC, and Si substrates have been investigated in the (2-6.3) eV ph oton energy range using cathodoluminescence (CL) at liquid nitrogen tempera ture. Besides a broad luminescence band at 3.2 eV the CL spectra shows mult iple, relatively narrow excitonic features in the near band-edge region at approximately 6.1 eV. The nature of the excitonic transitions is discussed and an estimate of the band-gap energy is given. (C) 2001 Elsevier Science B.V. All rights reserved.