Dielectric characteristics of AlN films grown by d.c.-magnetron sputteringdischarge

Aluminium nitride(AlN) films have attracted much interest as a promising op to-electronic material. In this work, AlN films were deposited on p-type si licon by d.c.-magnetron sputtering using different nitrogen concentrations in a mixture with argon and at different substrate temperatures. Structural analysis of the AlN films was performed by X-ray diffraction. The AlN capa citors (MIS structures) were obtained by evaporating aluminium on the back of the silicon wafer, and on circular areas on the film. These capacitors w ere used to obtain quasi-static current-voltage characteristics at room tem perature. The effect of substrate heating on produced AlN films and MIS cap acitors is shown. Capacitance-voltage measurements were obtained and indica ted that the substrate heating plays an important hole on the MIS capacitor dielectric properties. (C) 2001 Elsevier Science B.V. All rights reserved.