Conducting AlN films were fabricated on sapphire substrates by doping carbo
n and oxygen simultaneously using a two-beam pulsed laser deposition (two-b
eam PLD) technique. The AlN/O + C films were conductive semiconductors with
a resistivity of 10(5) Omega cm. These films are transparent to eyes and h
ad an absorption edge of 230 nm. On the other hand, AlN films incorporated
by either pure carbon or pure oxygen at the same concentration were insulat
ors. At an oxygen content of 10 at.%, the conductivity of the AlN/O + C fil
ms was increased with an increase in carbon incorporation. According to X-r
ay diffraction analysis, the AlN/O + C films had a different crystalline st
ructure than the stoichiometric AlN films. (C) 2001 Elsevier Science B.V. A
ll rights reserved.