Continuous-wave operation of 1.30 mu m GaAsSb/GaAs VCSELs

Authors
Anan, T Yamada, M Nishi, K Kurihara, K Tokutome, K Kamei, A Sugou, S
Citation
T. Anan et al., Continuous-wave operation of 1.30 mu m GaAsSb/GaAs VCSELs, ELECTR LETT, 37(9), 2001, pp. 566-567
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
9
Year of publication
2001
Pages
566 - 567
Database
ISI
SICI code
0013-5194(20010426)37:9<566:COO1MM>2.0.ZU;2-E
Abstract
1.30 mum VCSELs using GaAsSb quantum wells, which operate continuous-wave a t and above room temperature (RT), are reported. A threshold current as low as 1.2mA at RT and a maximum CW operating temperature of 70 degreesC are d emonstrated.