PROPERTIES OF CHEMICALLY DEPOSITED CU2S FIRMS ON POROUS SILICON

The electrical and optical properties of Cu2S films, deposited on poro us Si from a chemical bath, are presented. Annealing of the deposited film in air, at an optimized temperature of 150 degrees C, is shown to be essential to get films with the lowest values of electrical resist ivities. The film is more than 60% transparent in the wavelength range of 600-1200 nm. Films deposited on porous Si produce Schottky-like di odes. The best diode characteristics are obtained after annealing the film at 150 degrees C. The diodes show both photoresponse and electrol uminescence properties. Luminescence from porous Si, with a top coatin g of annealed Cu2S, is about 70% of that obtained when no coating was applied. (C) 1997 American Institute of Physics.