QUANTUM CONFINEMENT IN NANOSTRUCTURED CDNITE COMPOSITE THIN-FILMS

Citation
O. Alvarezfregoso et al., QUANTUM CONFINEMENT IN NANOSTRUCTURED CDNITE COMPOSITE THIN-FILMS, Journal of applied physics, 82(2), 1997, pp. 708-711
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
82
Issue
2
Year of publication
1997
Pages
708 - 711
Database
ISI
SICI code
0021-8979(1997)82:2<708:QCINCC>2.0.ZU;2-W
Abstract
Cd1-xNixTe nanostructured thin films have been deposited using the rad io frequency sputtering technique. Films are formed by sphericallike m icrocrystallites with a broad grain size distribution. The measured na nocrystallite average diameters were 35, 30, and 26 nm corresponding t o the films with Ni concentrations of 5%, 10%, and 15%, respectively. The film structure was zincblende,? resembling the crystalline structu re for bulk CdTe. Particle-size effects were observed in the optical a bsorption spectra. As the Ni content in the films increases, the grain size diminishes, and the optical band gap (E-g) energy shows a blue s hift at a rate of about 7.5 meV/at. %, for Ni concentrations up to 15 at. %. Alloying effects additional to quantum confinement effects are discussed. The E-g shifts due to quantum confinement have been found t o fall in the intermediate regime between strong and weak confinement. The quantum yield for the photoluminescence peak increases as the par ticle size decreases, probably as a result of exciton recombination en hancement due to batter nanocrystallites quality. (C) 1997 American In stitute of Physics.