D. Caputo et al., LOW-TEMPERATURE ADMITTANCE MEASUREMENT IN THIN-FILM AMORPHOUS-SILICONSTRUCTURES, Journal of applied physics, 82(2), 1997, pp. 733-741
In this paper we analyze low-temperature admittance (capacitance and c
onductance) measurement as an effective tool for the characterization
of amorphous silicon doped layers embedded in thin film structures. Te
mperature and frequency ranges of 20-250 K and 1-100 kHz, respectively
, were used. Measurements were performed on p-i silver and p-i-n struc
tures. Devices with different thicknesses, carbon, and boron content o
f the p-doped layer were examined. The evolution of the conductance of
p-i-n solar cells under illumination was also investigated. Results s
how excellent sensitivity of the measurement to the states of the dope
d layer. This sensitivity is explained by using a finite difference si
mulation program, which proves that at low temperature the trapping pr
ocess is spatially limited to the doped layers. (C) 1997 American Inst
itute of Physics.