High-frequency performance of lateral p-n junction photodiodes

Authors
Tsutsui, N Ryzhii, V Khmyrova, I Vaccaro, PO Taniyama, H Aida, T
Citation
N. Tsutsui et al., High-frequency performance of lateral p-n junction photodiodes, IEEE J Q EL, 37(6), 2001, pp. 830-836
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF QUANTUM ELECTRONICS
ISSN journal
00189197 → ACNP
Volume
37
Issue
6
Year of publication
2001
Pages
830 - 836
Database
ISI
SICI code
0018-9197(200106)37:6<830:HPOLPJ>2.0.ZU;2-P
Abstract
We developed an analytical device model for quantum well lateral p-n juncti on photodiodes (LJPDs), The model takes into account the features of the ca rrier transport in LJPDs and their geometry, which ensure short transit tim es and a low capacitance. This model is used for calculating the LJPD's cha racteristics as functions of the signal frequency, bias voltage, and struct ural parameters and for the estimation of the LJPD ultimate performance.