An indium phosphide MMIC amplifier for 180-205 GHz

This paper describes a high-performance Indium Phosphide (InP) monolithic m icrowave integrated circuit (MMIC) amplifier, which has been developed for application in radio-astronomy and imaging-array receivers. Implemented usi ng co-planar waveguide, the six-stage amplifier exhibits 15 dB gain, 10 dB input and output return loss, and low noise figure over the 180-205 GHz fre quency range. Only one design pass was needed to obtain excellent agreement between the predicted and measured characteristics of the circuit, a uniqu e achievement in this frequency band. The circuit is also the first 180-205 GHz amplifier designed for and successfully fabricated using TRW's standar d 0.1-mum InP HEMT process.