High-isolation W-band MEMS switches

This paper presents the design, fabrication and measurement of single, T-ma tch and pi -match W-hand high-isolation MEMS shunt switches on silicon subs trates, The single and T-match design result in -20 dB isolation over the 8 0-110 GHz range with an insertion loss of 0.25 +/- 0.1 dB, The rr-match des ign results in a reflection coefficient lower than -20 dB up to 100 GHz, an d an isolation of -30 to -40 dB from 75 to 110 GHz (limited by Leakage thro ugh the substrate). The associated insertion loss is 0.4 +/- 0.1 dB at 90 G Hz, To our knowledge, this is the first demonstration of high-performance M EMS switches at W-band frequencies.