Semiconductor lasers with 2-D-photonic crystal mirrors based on a wet-oxidized Al2O3-Mask

We have fabricated and investigated AlGaAs-InGaAs-based ridge waveguide (RW G) lasers with two-dimensional (2-D) triangular photonic crystal (PC) mirro rs using a wet-oxidized Al2O3 mask for the dry etching of the PC at one end of the ridge. The laser structure includes a 60-nm-thick AIAs layer positi oned in the upper cladding, which is converted into Al2O3 after the definit ion of the PC by electron beam lithography and shallow etching, Etching of the holes is then continued using the Al2O3 mask, to a final depth of 600 n m, The continuous-wave characteristics of the lasers show a clear dependenc e on the period of the PC including a significant decrease of the threshold current and an increase of the efficiency for properly adjusted crystal pa rameters.