Improved performance of 2-mu m GaInAs strained quantum-well lasers on InP by increasing carrier confinement

We have fabricated and analyzed strained GaInAs quantum-well diode lasers e mitting at wavelengths above 2 mum, grown by metal-organic chemical vapor p hase epitaxy on InP substrates, To study the effect of carrier confinement on laser performance, lasers grown with nearly lattice matched ternary GaIn As barriers and quaternary GaInAsP barriers were compared. The use of quate rnary barriers improves the device performance in terms of output power, em ission wavelength, characteristic temperature, differential quantum efficie ncy, and power efficiency. Internal losses and internal quantum efficiency remain unchanged, At a heat sink temperature of 330 K index guided diode la sers with GaInAsP-barriers emitting at 2.092 mum showed a continuous-wave ( CW) output power of 42 mW/facet.