Temperature dependence of gain characteristics in 1.3-mu m AlGaInAs/InP strained multiple-quantum-well semiconductor lasers

We have measured the temperature dependence of the gain characteristics in 1.3-mum AlGaInAs/InP strained multiple-quantum-well (MQW) semiconductor las ers using Haliki-Paoli method. By measuring the temperature dependences of the peak gain value and the gain peak wavelength, we evaluated the temperat ure dependences of the threshold current and the oscillation wavelength, re spectively The small temperature dependence of the threshold current in AlG aInAs/InP lasers is caused by the small temperature dependence of the trans parency current density which is represented by the char acteristic tempera ture T-Jtr of 116K in AlGaInAS/InP high T-0 lasers, the temperature depende nce of tile oscillation wavelength is slightly larger than that in GaInAsP/ InP lasers because of the larger temperature dependence of bandgap waveleng th 0.55 nm/K.