A device for sublimation molecular-beam deposition of silicon films

Authors
Shengurov, VG Shengurov, DV
Citation
Vg. Shengurov et Dv. Shengurov, A device for sublimation molecular-beam deposition of silicon films, INSTR EXP R, 44(1), 2001, pp. 130-132
Citations number
10
Categorie Soggetti
Instrumentation & Measurement
Journal title
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES
ISSN journal
00204412 → ACNP
Volume
44
Issue
1
Year of publication
2001
Pages
130 - 132
Database
ISI
SICI code
0020-4412(200101/02)44:1<130:ADFSMD>2.0.ZU;2-B
Abstract
A device for sublimation molecular-beam deposition of P-doped silicon films on standard silicon wafers with diameters of up to 76 mm is described. Uni form deposition was performed through asymmetric arrangement of the sublima tion source relative to the wafer, which was rotated about its axis.