Effect of annealing at argon pressure up to 1.2 GPa hydrogen-plasma-etchedand hydrogen-implanted single-crystalline silicon

Effect of annealing at up to 1400 K under argon pressure up to 1.2 GPa on h ydrogen-plasma-etched and hydrogen-implanted Czochralski or Roaring-zone-gr own single-crystalline-silicon (FZ), were investigated by secondary ions ma ss spectrometry (SIMS), X-ray, transmission electron microscopy (TEM), elec trical, infrared and photoluminescence (PL)methods. External stress during annealing of hydrogen-containing Si results in suppression of hydrogen out- diffusion. but in its pronounced diffusion into the sample depth. The resul t is also stress-stimulated creation of small bubbles. thermal donors and c rystallographic defects and prevention of sample splitting. (C) 2001 Intern ational Association for Hydrogen Energy. Published by Elsevier Science Ltd. All rights reserved.