Nature and occurrence of defects in 6H-SiC Lely crystals

Citation
M. Tuominen et al., Nature and occurrence of defects in 6H-SiC Lely crystals, J CRYST GR, 225(1), 2001, pp. 23-33
Citations number
14
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
225
Issue
1
Year of publication
2001
Pages
23 - 33
Database
ISI
SICI code
0022-0248(200105)225:1<23:NAOODI>2.0.ZU;2-J
Abstract
Synchrotron white beam topography has been applied to study defects in 6H-S iC platelets grown by the Lely method. In addition, high resolution X-ray d iffraction, chemical etching, capacitance-voltage and photoluminescence mea surements were carried out to confirm and complement the topography results . The occurrence of structural defects such as various misorientations, dis locations, stacking faults and precipitates are classified into grown-in an d post-growth defects. The results are related to the assumed growth proces s of the differently shaped platelets. (C) 2001 Published by Elsevier Scien ce B.V.