Preparation and characterisation of tin-doped indium oxide films

Authors
Kachouane, A Addou, M Bougrine, A El idrissi, B Messoussi, R Regragui, M Bernede, JC
Citation
A. Kachouane et al., Preparation and characterisation of tin-doped indium oxide films, MATER CH PH, 70(3), 2001, pp. 285-289
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS CHEMISTRY AND PHYSICS
ISSN journal
02540584 → ACNP
Volume
70
Issue
3
Year of publication
2001
Pages
285 - 289
Database
ISI
SICI code
0254-0584(20010601)70:3<285:PACOTI>2.0.ZU;2-2
Abstract
Tin-doped In2O3 (ITO) thin films were prepared by reactive evaporation from new pulverulent mixture of indium oxide, tin oxide and metallic indium at different partial pressures of oxygen. The films were annealed in a seconda ry vacuum just after deposition. Under optimal conditions of evaporation, t hese films are stoichiometric, show a good crystallinity and feature high t ransmission in visible region (T > 90%) and high reflection in near IR regi on versus oxygen pressure. (C) 2001 Elsevier Science B.V. All rights reserv ed.