Experimental results on composites made from SnMoO4 (SM) and SnO2 (SO) as c
andidate materials for humidity sensing are described. Sintered polycrystal
line disks of SnMoO4 (SMSO-10), SnO2 (SMSO-01) and composites of SM and SO
in the mole ratios 8:2, 6:4, 4:6 and 2:8 designated as SMSO-82, 64, 46 and
28 respectively and doped with 2 mol % of LiOH .H2O were subjected to d.c.
conductance measurements over the temperature range 100-400 degreesC in ine
rt atmosphere from which activation energies were determined. The thermoele
ctric power measurements in the temperature range 250-400 degreesC in ambie
nt air revealed the materials to be n-type semiconductors. The average valu
e of coefficient of TEP at 400 degreesC is compared. Since n-type materials
are preferred for humidity sensing, the terminal phases and the composites
were subjected to d.c. resistance measurements as a function of relative h
umidity in the range of 5-98% RH, achieved by different water vapor buffers
thermostated at 25 degreesC. The sensitivity factor, S-f (R-5%/R-98%) meas
ured at 25 degreesC revealed that SMSO-46 has the highest humidity sensitiv
ity, greater than 10(3). The response and recovery characteristics of SMSO-
46 were assessed. (C) 2001 Elsevier Science Ltd. All rights reserved.