Gallium droplet formation during MOVPE and thermal annealing of GaN

Authors
Karpov, SY Bord, OV Talalaev, RA Makarov, YN
Citation
Sy. Karpov et al., Gallium droplet formation during MOVPE and thermal annealing of GaN, MAT SCI E B, 82(1-3), 2001, pp. 22-24
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
82
Issue
1-3
Year of publication
2001
Pages
22 - 24
Database
ISI
SICI code
0921-5107(20010522)82:1-3<22:GDFDMA>2.0.ZU;2-Q
Abstract
Conditions favorable for liquid droplet appearance on the surface of GaN ca n be predicted for metal-organic vapor phase epitaxy and for thermal anneal ing of the crystal in a nitrogen or hydrogen atmosphere. A critical issue o f the model is accounting for the specific kinetics of N-2 and NH3 adsorpti on/desorption on a nitride surface. H-2 is found to lower considerably GaN thermal stability, in good agreement with experimental observations. The th eoretical results are compared with available experimental data. (C) 2001 E lsevier Science B.V. All rights reserved.