Growth of c-GaN on Si(100)

One hundred percent cubic GaN with 2.5 mum thickness was successfully obtai ned on Si(100) substrates using BP thin buffer layer. BP buffer layer was g rown on silicon(100) substrates with a dimension of 10 x 10 mm(2). The domi nant impurity in BP layer incorporated during epitaxial growth was silicon. The conduction type is readily varied depending on gas flow ratio BCl3/PCl 3. GaN was grown of BP/Si(100) using trimethylgallium and monomethylhydrazi ne as a starting materials. The growth of BP and GaN and their characteriza tions will be discussed. (C) 2001 Elsevier Science B.V. All rights reserved .