High nitrogen pressure growth of GaN crystals and their applications for epitaxy of GaN - based structures

The application of the pressure grown GaN single crystalline substrates all ows to grow near dislocation free layer structures by both MOCVD and MBE. T his is demonstrated by X-ray, AFM, TEM and defect selective etching results showing high structural perfection of both GaN substrates and epitaxial st ructures. The properties of these near dislocation free epitaxial layers an d structures indicate that dislocations are the important factor limiting r adiative efficiency of nitrides, especially at high excitations. (C) 2001 E lsevier Science B.V. All rights reserved.