Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN

Authors
Valcheva, E Paskova, T Abrashev, MV Persson, PAO Paskov, PP Goldys, EM Beccard, R Heuken, M Monemar, B
Citation
E. Valcheva et al., Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN, MAT SCI E B, 82(1-3), 2001, pp. 35-38
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
82
Issue
1-3
Year of publication
2001
Pages
35 - 38
Database
ISI
SICI code
0921-5107(20010522)82:1-3<35:IOM'OT>2.0.ZU;2-W
Abstract
Thick HVPE-GaN layers are grown on Si-doped and undoped MOCVD-GaN 'template ' layers as well as directly on sapphire, with the aim to investigate the e ffect of the MOCVD template on the strain relaxation and spatial distributi on of free carriers in the overgrown HVPE films. Spatially resolved cross-s ectional micro-Raman measurements, cathodoluminescence and transmission ele ctron microscopy show improved crystalline quality resulting in elimination of the non-uniformities of electron distribution, a low free carrier conce ntration (< 10(17) cm(-3)) as well as a significant strain relaxation effec t. (C) 2001 Elsevier Science B.V. All rights reserved.