GaN layer structures with buried tungsten nitrides (WNx) using epitaxial lateral overgrowth via MOVPE

A buried WNx structure with GaN by means of ELO technique has been investig ated. To prevent dissolution of the underlying GaN layer due to the W catal ytic effect, the WN, mask is employed instead of the W mask. The WNx, mask is produced by nitrogenation of the W film using NH, at higher temperatures than 600 degreesC. Thermal stability of WN, is good and the WNx/n-GaN cont act shows a Schottky type. The buried WNx structure with GaN is successfull y obtained by two-steps ELO technique. The WN, is effective to the mask of the ELO GaN layer, as well as the Schottky contact on n-GaN. (C) 2001 Elsev ier Science B.V. All rights reserved.