Citation
Cc. Yu et al., Investigation of beryllium implanted P-type GaN, MAT SCI E B, 82(1-3), 2001, pp. 82-84
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107
→ ACNP
Volume
82
Issue
1-3
Year of publication
2001
Pages
82 - 84
Database
ISI
SICI code
0921-5107(20010522)82:1-3<82:IOBIPG>2.0.ZU;2-F
Abstract
We report the preliminary results of beryllium implanted into P-type GaN an
d the effects on the characteristic of Mg-doped P-GaN. These samples were i
mplanted with Be ions were implanted with two different energies of 50 and
150 keV at two different doses of similar to 10(13) and 10(14) cm(-2) at ro
om temperature. Surface morphology and photoluminescence measurements are p
resented. (C) 2001 Elsevier Science B.V. All rights reserved.