Sa. Goodman et al., Deep levels introduced in n-GaN grown by the ELOG technique by high-energyelectron irradiation, MAT SCI E B, 82(1-3), 2001, pp. 95-97
We have used deep level transient spectroscopy (DLTS) to investigate the el
ectron trap defects introduced in n-GaN grown, using the epitaxial lateral
overgrowth technique during high-energy electron irradiation from a Sr-90 r
adionuclide source. The results indicate that, apart from the major defect
with an energy level at 0.20 eV below the conduction band (supposed to be r
elated to the V,), at least four other defects with energy levels centered
about 0.90 +/- 0.15 eV, are introduced. From modeling, ignoring temperature
dependent capture cross-section effects we have determined their activatio
n energies, and temperature independent capture cross sections, commonly kn
own as the DLTS signature. (C) 2001 Elsevier Science B.V. All rights reserv
ed.