Processing-induced electron traps in n-type GaN

We have used deep-level transient spectroscopy (DLTS) to investigate the el ectron trap defects introduced in n-GaN during the fabrication of Pt Schott ky contacts by electro-deposition, electron beam deposition and sputter dep osition under three different deposition conditions. The results indicate t hat electro-deposition is the only one of these processes that does not int roduce any defects. Diodes fabricated by this technique also have the best rectification properties. Both electron beam deposition and sputter deposit ion introduce electron traps in concentrations that increase towards the Pt /GaN interface. However, sputter deposition at a lower power and higher pre ssure results in significantly reduced defect concentrations and improved r ectification properties. (C) 2001 Elsevier Science B.V. All rights reserved .