Patterning of GaN by ion implantation-dependent etching

In earlier work we demonstrated that GaN can be selectively etched in the p hotoresist developer AZ-400K after ion implantation. Subsequent studies of etching solutions and etching bath temperature show the same etching behavi or for KOH solutions and AZ-400K. Increasing etching bath temperatures incr eases the initial etch rate as well the final etching depth. Additionally t he etching depth depends on the implantation parameters and increases with increasing ion dose and ion energy. The final etching depth can be correlat ed with the depth and degree of damage, induced by ion implantation. Patter ning of GaN is possible by ion implantation through a mask followed by wet etching. Maskless patterning can be achieved with a focused ion beam. (C) 2 001 Elsevier Science B.V. All rights reserved.