Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactant

The effects of isoelectronic indium doping on optical properties of GaN lay ers grown by metalorganic vapor-phase epitaxy have been studied. Two sets o f samples have been grown with hydrogen and with nitrogen as carrier gas. I t has been shown from scanning electron microscopy, cathodoluminescence and time-resolved photoluminescence that In-doped samples have a lower disloca tion density, a narrower photoluminescence line width and a longer free exc iton lifetime. The improvements of structural and optical properties are at tributed to the effect of In on dislocations. (C) 2001 Elsevier Science B.V . All rights reserved.