Time-resolved spectroscopy of MBE-grown GaN/AlGaN hetero- and homo-epitaxial quantum wells

Authors
Gallart, M Morel, A Taliercio, T Lefebvre, P Gil, B Allegre, J Mathieu, H Grandjean, N Massies, J Grzegory, I Porowsky, S
Citation
M. Gallart et al., Time-resolved spectroscopy of MBE-grown GaN/AlGaN hetero- and homo-epitaxial quantum wells, MAT SCI E B, 82(1-3), 2001, pp. 140-142
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
82
Issue
1-3
Year of publication
2001
Pages
140 - 142
Database
ISI
SICI code
0921-5107(20010522)82:1-3<140:TSOMGH>2.0.ZU;2-5
Abstract
GaN/AlGaN quantum wells (QWs) grown by molecular beam epitaxy are studied b y time-resolved photoluminescence spectroscopy. We compare samples grown on sapphire and on GaN substrates. In the latter case, we observe long-lived, bi-exponential decays, whereas faster, mono-exponential decays are obtaine d on comparable hetero-epitaxial QWs. Totally different behaviors are measu red when the temperature is changed. We interpret our results in terms of s econdary feeding processes involving localized states in the barriers. We a lso discuss the role of dislocation densities. (C) 2001 Elsevier Science B. V. All rights reserved.