Nonlinear spectroscopy of homoepitaxial GaN

Citation
C. Schweitzer et al., Nonlinear spectroscopy of homoepitaxial GaN, MAT SCI E B, 82(1-3), 2001, pp. 156-158
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
82
Issue
1-3
Year of publication
2001
Pages
156 - 158
Database
ISI
SICI code
0921-5107(20010522)82:1-3<156:NSOHG>2.0.ZU;2-7
Abstract
Exciton polaritons from the three uppermost valence bands and the lowest co nduction band in homoepitaxial GaN are studied by nonlinear spectroscopy. S econd and third harmonic generation and three-photon difference-frequency g eneration are used to excite resonances on different polariton branches. Th e resonances show a characteristic polarization dependence, which is consis tent with the symmetry assignment of the valence bands. (C) 2001 Elsevier S cience B.V. All rights reserved.