Etch end-point detection of GaN-based devices using optical emission spectroscopy

In this study, optical emission spectroscopy (OES) was performed to detect etch end-point during the etching of GaN/AlGaN-based devices. In-situ OES e xperiments during the etching were carried out to measure the etch product signals of AlGaN/GaN heterostructures as well as single III-nitrides. A pos sibility of detecting etch end-point by OES was identified for both optoele ctronic devices and electronic devices using etch product emissions such as Al (396.1 nm) and Ga (417.2 nm). (C) 2001 Elsevier Science B.V. All rights reserved.