Confined exciton-polariton modes in a thin, homo-epitaxial, GaN film grownby molecular beam epitaxy

Authors
Morel, A Taliercio, T Lefebvre, P Gallart, M Gil, B Grandjean, N Massies, J Grzegory, I Porowski, S
Citation
A. Morel et al., Confined exciton-polariton modes in a thin, homo-epitaxial, GaN film grownby molecular beam epitaxy, MAT SCI E B, 82(1-3), 2001, pp. 173-177
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
82
Issue
1-3
Year of publication
2001
Pages
173 - 177
Database
ISI
SICI code
0921-5107(20010522)82:1-3<173:CEMIAT>2.0.ZU;2-#
Abstract
We report the observation of confined modes in the mixed photon/exciton-lik e branches of exciton-polaritons propagating along the growth axis of a 700 nm-thick GaN film, deposited by Molecular Beam Epitaxy on bulk GaN substra tes. The energies of the confined modes are in agreement with a simple mode lling of quantized wavevectors in the thin layer, including the proper four -branch dispersion relation of polaritons in the wurtzite GaN. Such an obse rvation results from the large coherence length of the exciton-polariton in the epilayer, testifying to the very good crystalline quality of the mater ial. (C) 2001 Elsevier Science B.V. All rights reserved.