Renormalization of the exciton parameters in piezoelectric nitride quantumstructures: the effects of injection intensity and temperature

Exciton properties have been calculated for polarized GaN/AlGaN quantum wel l (QW) as a function of the injection intensity for various temperatures. A self-consistent process is performed to solve Schrodinger and Poisson equa tions, and a trial function that takes into account quantum exclusion princ iple in the filling of the reciprocal space is chosen for the exciton. When carriers are injected in the quantum structure, three different regimes ar e evidenced before the complete bleaching of the electron-hole interaction at large excitation intensities. We show that, for a given structure, the c ritical injection intensity of carriers at which this exciton starts to dis sociate due to kinetic effects increases with the temperature of the lattic e. (C) 2001 Elsevier Science B.V. All rights reserved.