Growth and characterisation of self-assembled cubic GaN quantum dots

Authors
Adelmann, C Guerrero, EM Chabuel, F Simon, J Bataillou, B Mula, G Dang, LS Pelekanos, NT Daudin, B Feuillet, G Mariette, H
Citation
C. Adelmann et al., Growth and characterisation of self-assembled cubic GaN quantum dots, MAT SCI E B, 82(1-3), 2001, pp. 212-214
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
82
Issue
1-3
Year of publication
2001
Pages
212 - 214
Database
ISI
SICI code
0921-5107(20010522)82:1-3<212:GACOSC>2.0.ZU;2-D
Abstract
Self-assembled cubic GaN quantum dots have been grown by plasma-assisted mo lecular-beam epitaxy on cubic AIN. Atomic force microscopy and transmission electron microscopy reveal islands of a mean height of 1.6 nm and a mean d iameter of 13 nm, The influence of stacking faults on island nucleation is discussed. The quantum dots show ultraviolet photo- and cathodo-luminescenc e with no thermal quenching up to room temperature. (C) 2001 Elsevier Scien ce B.V. All rights reserved.