Donor binding energies in group III-nitride-based quantum wells: influenceof internal electric fields

Authors
Morel, A Lefebvre, P Taliercio, T Gallart, M Gil, B Mathieu, H
Citation
A. Morel et al., Donor binding energies in group III-nitride-based quantum wells: influenceof internal electric fields, MAT SCI E B, 82(1-3), 2001, pp. 221-223
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
82
Issue
1-3
Year of publication
2001
Pages
221 - 223
Database
ISI
SICI code
0921-5107(20010522)82:1-3<221:DBEIGI>2.0.ZU;2-L
Abstract
We present calculations of the donor binding energy in GaN-AlxGa1-xN single quantum wells, including the effects of internal electric fields induced b y spontaneous and piezoelectric polarizations. The variation of this energy versus position of the donor ion in the structure is of several tens of me V, i.e. much larger than for familiar quantum well systems. Realistic cases including the donor in the well and in the surrounding barriers are consid ered. (C) 2001 Elsevier Science B.V. All rights reserved.