GaN electronics for high power, high temperature applications

Authors
Pearton, SJ Ren, F Zhang, AP Dang, G Cao, XA Lee, KP Cho, H Gila, BP Johnson, JW Monier, C Abernathy, CR Han, J Baca, AG Chyi, JI Lee, CM Nee, TE Chuo, CC Chu, SNG
Citation
Sj. Pearton et al., GaN electronics for high power, high temperature applications, MAT SCI E B, 82(1-3), 2001, pp. 227-231
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
82
Issue
1-3
Year of publication
2001
Pages
227 - 231
Database
ISI
SICI code
0921-5107(20010522)82:1-3<227:GEFHPH>2.0.ZU;2-#
Abstract
A brief review is given of recent progress in fabrication of high voltage G aN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors and G aN metal-oxide semiconductor field effect transistors. Improvements in epit axial layer quality and in fabrication techniques have led to significant a dvances in device performance. (C) 2001 Elsevier Science B.V. All rights re served.