Comprehensive study of the effects of irradiation on charge collection efficiency in silicon detectors

Authors
Borrello, L Dell'Orso, R Dutta, S Gennai, S Mariani, M Messineo, A Segneri, G Starodumov, A Teodorescu, L Tonelli, G Verdini, PG
Citation
L. Borrello et al., Comprehensive study of the effects of irradiation on charge collection efficiency in silicon detectors, NUCL INST A, 461(1-3), 2001, pp. 178-181
Citations number
10
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002 → ACNP
Volume
461
Issue
1-3
Year of publication
2001
Pages
178 - 181
Database
ISI
SICI code
0168-9002(20010401)461:1-3<178:CSOTEO>2.0.ZU;2-#
Abstract
The Charge Collection Efficiency (CCE) for heavily irradiated silicon devic es has been carefully investigated on a series of microstrip detectors. Lar ge-area sensors designed for the CMS silicon tracker have been irradiated w ith neutrons and protons up to a very high fluence. Effects on CCE have bee n studied using a beam of minimum ionizing particles and a fast shaping tim e electronics similar to what is expected in CMS. The paper shows the perfo rmance of the sensors for CCE and Signal-to-Noise ratio (S/N) under differe nt operating conditions. (C) 2001 Elsevier Science B.V. All rights reserved .