Lorentz angle measurements in irradiated silicon detectors between 77 and 300 K

Future experiments are using silicon detectors in a high radiation environm ent and in high magnetic fields. The radiation tolerance of silicon improve s by cooling it to temperatures of approximately 130 K. Charge carriers gen erated in silicon by traversing particles are deflected due to the Lorentz force. We present measurements of the Lorentz angle in irradiated silicon d etectors between 77 and 300 It. These results and the ones obtained from no n-irradiated detectors are compared with simulations. (C) 2001 Published by Elsevier Science B.V.