Correction of dopant concentration fluctuation effects in silicon drift detectors

Authors
Nouais, D Bondila, M Bonvicini, V Cerello, P Crescio, E Giubellino, P Hernandez-Montoya, R Kolojvari, A Montano, LM Nilsen, BS Piemonte, C Rashevsky, A Tosello, F Vacchi, A Wheadon, R
Citation
D. Nouais et al., Correction of dopant concentration fluctuation effects in silicon drift detectors, NUCL INST A, 461(1-3), 2001, pp. 222-225
Citations number
9
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002 → ACNP
Volume
461
Issue
1-3
Year of publication
2001
Pages
222 - 225
Database
ISI
SICI code
0168-9002(20010401)461:1-3<222:CODCFE>2.0.ZU;2-B
Abstract
Dopant fluctuations in silicon wafers are responsible for systematic errors in the determination of the particle crossing point in silicon drift detec tors. In this paper, we report on the first large-scale measurement of this effect by means of a particle beam. A significant improvement of the anodi c resolution has been obtained by correcting for these systematic deviation s. (C) 2001 Elsevier Science B.V. All rights reserved.