Back-gate control in an InAs-based two-dimensional system

Authors
Suzuki, K Miyashita, S Hirayama, Y
Citation
K. Suzuki et al., Back-gate control in an InAs-based two-dimensional system, PHYSICA C, 352(1-4), 2001, pp. 125-127
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA C
ISSN journal
09214534 → ACNP
Volume
352
Issue
1-4
Year of publication
2001
Pages
125 - 127
Database
ISI
SICI code
0921-4534(200104)352:1-4<125:BCIAIT>2.0.ZU;2-V
Abstract
Growing a heterostructure on a conductive substrate, the channel carrier de nsity can be controlled by an applied gate voltage to the substrate. We mad e InAs/Al/GaSb single-quantum wells using n- and p-type InAs substrates as a back-gate. The devices perform well and the gate-leakage characteristics are better for the n-type substrates than for the p-type substrates. (C) 20 01 Elsevier Science B.V. All rights reserved.