Characteristics of Al/p-AgGa0.25In0.75Se2 polycrystalline thin film Schottky barrier diodes

Authors
Chandra, GH Hussain, OM Uthanna, S Naidu, BS
Citation
Gh. Chandra et al., Characteristics of Al/p-AgGa0.25In0.75Se2 polycrystalline thin film Schottky barrier diodes, PHYS SCR, 63(5), 2001, pp. 422-424
Citations number
17
Categorie Soggetti
Physics
Journal title
PHYSICA SCRIPTA
ISSN journal
02811847 → ACNP
Volume
63
Issue
5
Year of publication
2001
Pages
422 - 424
Database
ISI
SICI code
0281-1847(200105)63:5<422:COAPTF>2.0.ZU;2-D
Abstract
Al/p-AgGa0.25In0.75Se2 polycrystalline thin film Schottky barrier diodes ha ve been prepared. The current-voltage. capacitance-voltage and photorespons e have been investigated. Various important physical parameters of these di odes were derived from these measurements.