Subthreshold carrier-LO phonon dynamics in semiconductors with intermediate polaron coupling: A purely quantum kinetic relaxation channel

Citation
M. Betz et al., Subthreshold carrier-LO phonon dynamics in semiconductors with intermediate polaron coupling: A purely quantum kinetic relaxation channel, PHYS REV L, 86(20), 2001, pp. 4684-4687
Citations number
19
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
86
Issue
20
Year of publication
2001
Pages
4684 - 4687
Database
ISI
SICI code
0031-9007(20010514)86:20<4684:SCPDIS>2.0.ZU;2-F
Abstract
Femtosecond transmission spectra of highly polar CdTe are compared to more covalent GaAs contrasting semiclassical kinetics with two-time quantum kine tics based on the Dyson equation. Nonequilibrium heavy holes in CdTe show u ltrafast energy redistribution via the Frohlich mechanism even if photoexci ted below the LO phonon energy. This subthreshold relaxation is a genuine q uantum kinetic effect. It gains importance if the polaron self-energy is co mparable to the phonon energy. Conservation of the free-particle energies i s not required under these conditions.